A calculation method for the scattering cross-section sigma of charged carriers on radiation-induced cluster defects has been developed using a spherical cluster model with rectangular potential barrier shape, of radius and height of 15 nm and 0.6 eV, respectively. Values of the cluster cross-section around 2.10(-11) cm(2) have been obtained for charged carrier energies from 10(-4) eV to over 600 eV. Applying the relaxation-time approximation of the Boltzmann equation, the influence of clusters on silicon transport properties has been observed to be close to the acoustic-phonon one. The dependence of the Hall factor on radiation-induced clusters has been determined numerically for temperatures ranging from 5 K to 400 K. The results indicate that the presence of clusters of such dimensions would not change significantly the Hall coefficient R(H).
Influence of radiation-induced clusters on transport properties of silicon / E. Borchi;M. Bruzzi;U. Biggeri;S. Lazanu. - In: NUOVO CIMENTO DELLA SOCIETÀ ITALIANA DI FISICA. D CONDENSED MATTER, ATOMIC, MOLECULAR AND CHEMICAL PHYSICS, BIOPHYSICS. - ISSN 0392-6737. - STAMPA. - 18:(1996), pp. 621-633. [10.1007/BF02453253]