Comparison of radiation damage in silicon detectors induced by pions, protons and neutrons

High-resistivity silicon detectors have been irradiated, respectively, with neutrons, protons and pions; fluences between 1 . 10(12) and 4 . 10(13) particles/cm(2) were attained. Measurements of I-V, C-V characteristics and Thermally Stimulated Current (TSC) analyses were performed before and after irradiation in order to monitor electrical and lattice damage induced by irradiation with different particles. Electrical degradation parameters have been determined; energy levels and concentrations of main radiation-induced defects have been attained by TSC analysis. Results show that different particles irradiation introduce mainly the same energy levels of induced traps in the bulk. An increase in concentration of the same kind of point defects with fluence has been also observed for the different irradiation particles.