Hall effect measurements on proton-irradiated ROSE samples

Bulk samples obtained from two wafers of a silicon monocrystal material produced by float-zone refinement have been analysed using the four-point probe method. One of the two wafers comes from an oxygenated ingot; two sets of pure and oxygenated samples have been irradiated with 24 GeV/c protons in the fluence range from 10(13) to 1.74 x 10(14) p/cm(2). Van der Pauw resistivity and Hall coefficient have been measured before and after irradiation as a function of the temperature. A thermal treatment (30 min at 100 degrees C) has been performed to accelerate the reverse annealing effect in the irradiated silicon. The irradiated samples show the same exponential dependence of the resistivity and of the Hall coefficient on the temperature corresponding to the presence of radiation-induced deep energy levels in the silicon gap. The free carrier concentrations (n, p) have been evaluated in the investigated fluence range. The inversion of the conductivity type from n to p occurred, respectively, at 7 x 10(13) and at 4 x 10(13) p/cm(2) before and after the annealing treatment for both the two sets. Only slight differences have been detected between the pure and the oxygenated samples.