Electrical properties of high (4-6 k Omega cm) and medium (1-1.5 k Omega cm) resistivity p(+)/n/n(+) silicon detectors irradiated with very high fluence neutrons, up to 4x10(15) neutrons/cm(2), have been studied. Some new results are presented and discussed.
Study of electrical properties of high- and medium-resistivity silicon detectors irradiated with very high neutron fluence / U. Biggeri;E. Borchi;M. Bruzzi;Z. Li;E. Verbitskaya. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 409:(1998), pp. 176-179. [10.1016/S0168-9002(97)01258-8]
Study of electrical properties of high- and medium-resistivity silicon detectors irradiated with very high neutron fluence
BORCHI, EMILIO;BRUZZI, MARA;
1998
Abstract
Electrical properties of high (4-6 k Omega cm) and medium (1-1.5 k Omega cm) resistivity p(+)/n/n(+) silicon detectors irradiated with very high fluence neutrons, up to 4x10(15) neutrons/cm(2), have been studied. Some new results are presented and discussed.
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