The a.c. capacitance of p(+)n silicon diodes irradiated with 1 MeV neutrons in the fluence range from 4 x 10(12) to 4 x 10(15) cm(-2) has been measured as a function of temperature and test signal frequency. A correlation between the radiation-induced defects observed by thermally stimulated currents analysis and the experimental capacitance has been carried out. The C(T) and C(f) curves have been found to be strongly influenced by the presence of a dominant radiation-induced defect with energy level E-1 = E-C-0.46 eV below the conduction band and a capture cross section sigma approximate to 10(-15) cm(2) which is consistent with a divacancy related complex.
Temperature and frequency dependence of the capacitance of heavily irradiated silicon diodes / E. Borchi;M. Bruzzi;S. Pirollo;S. Sciortino. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 42:(1998), pp. 2093-2096. [10.1016/S0038-1101(98)00186-5]
Temperature and frequency dependence of the capacitance of heavily irradiated silicon diodes
BORCHI, EMILIO;BRUZZI, MARA;SCIORTINO, SILVIO
1998
Abstract
The a.c. capacitance of p(+)n silicon diodes irradiated with 1 MeV neutrons in the fluence range from 4 x 10(12) to 4 x 10(15) cm(-2) has been measured as a function of temperature and test signal frequency. A correlation between the radiation-induced defects observed by thermally stimulated currents analysis and the experimental capacitance has been carried out. The C(T) and C(f) curves have been found to be strongly influenced by the presence of a dominant radiation-induced defect with energy level E-1 = E-C-0.46 eV below the conduction band and a capture cross section sigma approximate to 10(-15) cm(2) which is consistent with a divacancy related complex.
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