A distortion of the thermally stimulated currents (TSC) line-shape and peak position has been observed in the temperature range 8-20 K in n-type silicon. This behaviour has been explained through the Poote-Frenkel effect, considering both the change of the depletion depth due to the thermal release of carriers and the corresponding variation of the emission constant due to the change in the electric field. A numerical fit has been developed, the results of which are in good agreement with the experimental data. The method is quite general and can be applied to the shallow-level analysis of less popular semiconductor materials.
A method of TSC analysis of shallow levels applied to silicon / E Borchi;M Bruzzi;S Pirollo;S Sciortino. - In: JOURNAL OF PHYSICS D. APPLIED PHYSICS. - ISSN 0022-3727. - STAMPA. - 31:(1998), pp. L93-L96. [10.1088/0022-3727/31/24/002]
A method of TSC analysis of shallow levels applied to silicon
BORCHI, EMILIO;BRUZZI, MARA;SCIORTINO, SILVIO
1998
Abstract
A distortion of the thermally stimulated currents (TSC) line-shape and peak position has been observed in the temperature range 8-20 K in n-type silicon. This behaviour has been explained through the Poote-Frenkel effect, considering both the change of the depletion depth due to the thermal release of carriers and the corresponding variation of the emission constant due to the change in the electric field. A numerical fit has been developed, the results of which are in good agreement with the experimental data. The method is quite general and can be applied to the shallow-level analysis of less popular semiconductor materials.
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