The Fermi level pinning at a boundary value of approximate to E-v + 0.5 eV, observed in heavily irradiated silicon, has been described considering two main traps related to divacancy (V-2) and carbon-oxygen complex (CiOi), with energy levels at E-c - 0.46 eV (acceptor) and E-v + 0.36 eV (donor), respectively. The appearance of a double junction in irradiated p(+)/n/n(+) silicon detectors is discussed in the framework of the proposed model.
A two-level model for heavily irradiated silicon detectors / E Borchi;M Bruzzi;Z Li;S Pirollo. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 425:(1999), pp. 343-346. [10.1016/S0168-9002(98)01378-3]
A two-level model for heavily irradiated silicon detectors
BORCHI, EMILIO;BRUZZI, MARA;
1999
Abstract
The Fermi level pinning at a boundary value of approximate to E-v + 0.5 eV, observed in heavily irradiated silicon, has been described considering two main traps related to divacancy (V-2) and carbon-oxygen complex (CiOi), with energy levels at E-c - 0.46 eV (acceptor) and E-v + 0.36 eV (donor), respectively. The appearance of a double junction in irradiated p(+)/n/n(+) silicon detectors is discussed in the framework of the proposed model.
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