Two sets of p-type silicon thigh resistivity bulk and low resistivity epitaxial) samples and one set of n(+)-p junctions have been irradiated with fast neutrons up to 8 x 10(13) cm(-2). I-V and C-V characteristics as well as Thermally Stimulated Currents (TSC) and Hall Effect (HE) analyses have been performed on the irradiated samples and diodes in view to determine the radiation-induced damage and the change in the electrical properties. A change in the effective carrier concentration and in the leakage current after irradiation similar to the one found for p(+)-n detectors has been observed in p-type diodes. An increase with the fluence of the resistivity and Hall coefficient was measured at room temperature both for the low and high resistivity sets. This evidence has been explained in terms of a two-level model taking into account a linear increase in concentration with the fluence of the main radiation-induced defects observed with TSC, probably related to divacancy and carbon-oxygen complex.

Radiation damage on p-type silicon detectors / S Pirollo;U Biggeri;E Borchi;M Bruzzi;E Catacchini;S Lazanu;Z Li;S Sciortino. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 426:(1999), pp. 126-130. [10.1016/S0168-9002(98)01480-6]

Radiation damage on p-type silicon detectors

BORCHI, EMILIO;BRUZZI, MARA;SCIORTINO, SILVIO
1999

Abstract

Two sets of p-type silicon thigh resistivity bulk and low resistivity epitaxial) samples and one set of n(+)-p junctions have been irradiated with fast neutrons up to 8 x 10(13) cm(-2). I-V and C-V characteristics as well as Thermally Stimulated Currents (TSC) and Hall Effect (HE) analyses have been performed on the irradiated samples and diodes in view to determine the radiation-induced damage and the change in the electrical properties. A change in the effective carrier concentration and in the leakage current after irradiation similar to the one found for p(+)-n detectors has been observed in p-type diodes. An increase with the fluence of the resistivity and Hall coefficient was measured at room temperature both for the low and high resistivity sets. This evidence has been explained in terms of a two-level model taking into account a linear increase in concentration with the fluence of the main radiation-induced defects observed with TSC, probably related to divacancy and carbon-oxygen complex.
1999
426
126
130
S Pirollo;U Biggeri;E Borchi;M Bruzzi;E Catacchini;S Lazanu;Z Li;S Sciortino
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/676796
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 16
  • ???jsp.display-item.citation.isi??? 15
social impact