The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2 x 10(15) n/cm(2) yields a MIP signal of at least 15000 e(-) both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current.
Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures / K. Borer;S. Janos;V.G. Palmieri;B. Dezillie;Z. Li;P. Collins;T.O. Niinikoski;C. Lourenço;P. Sonderegger;E. Borchi;M. Bruzzi;S. Pirollo;V. Granata;S. Pagano;S. Chapuy;Z. Dimcovski;E. Grigoriev;W. Bell;S.R.H. Devine;V. O'Shea;K. Smith;P. Berglund;W. de Boer;F. Hauler;S. Heising;L. Jungermann;L. Casagrande;V. Cindro;M. Mikuž;M. Zavartanik;C. da Viá;A. Esposito;I. Konorov;S. Paul;L. Schmitt;S. Buontempo;N. D'Ambrosio;S. Pagano;G. Ruggiero;V. Eremin;E. Verbitskaya. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 440:(2000), pp. 5-16. [10.1016/S0168-9002(99)00799-8]
Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures
BORCHI, EMILIO;BRUZZI, MARA;
2000
Abstract
The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2 x 10(15) n/cm(2) yields a MIP signal of at least 15000 e(-) both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current.
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