In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV is characterised theoretically by means of the concentration of primary defects per unit fluence. The results are compared to the similar ones corresponding to diamond, silicon and GaAs.
Theoretical calculations of the primary defects induced by pions and protons in SiC / S. Lazanu;I. Lazanu;E. Borchi;M. Bruzzi. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 485:(2002), pp. 768-773. [10.1016/S0168-9002(01)02147-7]
Theoretical calculations of the primary defects induced by pions and protons in SiC
BORCHI, EMILIO;BRUZZI, MARA
2002
Abstract
In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV is characterised theoretically by means of the concentration of primary defects per unit fluence. The results are compared to the similar ones corresponding to diamond, silicon and GaAs.
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