The Electrochemical Atomic Layer Deposition (ECALD) methodology has been recently employed to synthesize thin films of ternary Cu-Zn sulfides, technologically relevant for photovoltaic semiconductors. This approach, which represents probably the first successful synthesis of a ternary Cu-Zn sulfide, consisted in alternate ECALD depositions of CuS and ZnS layers that yielded a compound with a Cu/Zn ratio of about 6, thus confirming the low contribution of Zn in ternary compound already evidenced in previous studies. This paper, which represents the logical sequel, shows that it is possible to establish a well defined relationship between deposition sequence and stoichiometry as done for the other ternary compounds containing Zn

Electrochemical growth of Cu-Zn sulfides of various stoichiometries / M. Innocenti; S. Cinotti; I.Bencistà; E. Carretti; L. Becucci; F. Di Benedetto; A. Lavacchi; M.L. Foresti. - In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY. - ISSN 0013-4651. - STAMPA. - 161(1):(2014), pp. D14-D17. [10.1149/2.021401jes]

Electrochemical growth of Cu-Zn sulfides of various stoichiometries

INNOCENTI, MASSIMO;CINOTTI, SERENA;BENCISTA', ILARIA;CARRETTI, EMILIANO;BECUCCI, LUCIA;DI BENEDETTO, FRANCESCO;LAVACCHI, ALESSANDRO;FORESTI, MARIA LUISA
2014

Abstract

The Electrochemical Atomic Layer Deposition (ECALD) methodology has been recently employed to synthesize thin films of ternary Cu-Zn sulfides, technologically relevant for photovoltaic semiconductors. This approach, which represents probably the first successful synthesis of a ternary Cu-Zn sulfide, consisted in alternate ECALD depositions of CuS and ZnS layers that yielded a compound with a Cu/Zn ratio of about 6, thus confirming the low contribution of Zn in ternary compound already evidenced in previous studies. This paper, which represents the logical sequel, shows that it is possible to establish a well defined relationship between deposition sequence and stoichiometry as done for the other ternary compounds containing Zn
2014
161(1)
D14
D17
M. Innocenti; S. Cinotti; I.Bencistà; E. Carretti; L. Becucci; F. Di Benedetto; A. Lavacchi; M.L. Foresti
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/823440
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