The Electrochemical Atomic Layer Epitaxy (ECALE) method was used to obtain compound semiconductors. This study reviews the state of art of the literature on the knowledge about chalcogenide materials, and it sets up perspectives for photovoltaic applications. We also present some results about thin films of Cu3SnS4 (kuramite) and Cu2ZnSnS4 (kesterite) obtained by electrodeposition and their chemical-physics characterization. We present new results where we modulated composition, bandgap, morphology and structure of semiconductor thin films obtained by electrodeposition.
Electrodeposition of semiconductors thin films with different composition and band gap / M. Innocenti; I. Bencistà; L. Becucci; F. Di Benedetto; S. Cinotti; L. Q. Wang; A. Lavacchi; M.V. Pagliaro; F. Vizza; C. Zafferoni; M.L. Foresti. - ELETTRONICO. - (2013), pp. 2328-2328. (Intervento presentato al convegno 224th ECS Meeting tenutosi a San Francisco nel 27 Ottobre- 1 Novembre 2013).
Electrodeposition of semiconductors thin films with different composition and band gap
INNOCENTI, MASSIMO;BENCISTA', ILARIA;BECUCCI, LUCIA;DI BENEDETTO, FRANCESCO;CINOTTI, SERENA;LAVACCHI, ALESSANDRO;ZAFFERONI, CLAUDIO;FORESTI, MARIA LUISA
2013
Abstract
The Electrochemical Atomic Layer Epitaxy (ECALE) method was used to obtain compound semiconductors. This study reviews the state of art of the literature on the knowledge about chalcogenide materials, and it sets up perspectives for photovoltaic applications. We also present some results about thin films of Cu3SnS4 (kuramite) and Cu2ZnSnS4 (kesterite) obtained by electrodeposition and their chemical-physics characterization. We present new results where we modulated composition, bandgap, morphology and structure of semiconductor thin films obtained by electrodeposition.File | Dimensione | Formato | |
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