Characterization of PIN Diode for T-R Radar Limiter Design at X-Band

This paper introduces a new characterizing method for packaged PIN diodes. The method is specifically oriented to the design of microwave transmitting-receiving (TR) radar limiters in steady-state operating conditions. Characterization were carried out at X-band in both ON ( Vbias=10V) and OFF ( Vbias=0V) PIN diode bias states, and varying its position inside a WR90 waveguide based test JIG. The effects of the JIG as well as the diode package parasitics have been de-embedded from the experimental data by means of a accurate EM simulations. The resulting extracted PIN diode Y parameters represent the basis to develop of a PIN diode lumped element model. The model has been adopted to predict the steady state TR limiter performances across X-band.